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PD55008S-E
PD55008S-EReference image

Images are for reference only

Mfr. #:
PD55008S-E
Batch:
new
Description:
RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor POWER RF
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current 4 A
Vds-Drain-Source Breakdown Voltage 40 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1 GHz
Gain 17 dB
Output Power 8 W
Minimum Operating Temperature - 65 C
Maximum Operating Temperature 150 C
Mounting Style SMD/SMT
Package/Case PowerSO-10
Package Tube
Other product information

Advantage price,PD55008S-E in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
400+ $13.4856 $5394.24
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
Inquiry
Minimum:
400
MPQ:
400
Multiples:
1
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